**HMC653LP2ETR: A High-Performance GaAs pHEMT MMIC Low Noise Amplifier from 2 to 20 GHz**

The relentless drive for higher data rates and broader bandwidth in modern radar, electronic warfare (EW), and telecommunications systems places immense demand on the performance of RF front-ends. At the heart of these systems, the low noise amplifier (LNA) is critical, as it sets the baseline for signal integrity and system sensitivity. The **HMC653LP2ETR from Analog Devices** stands out as a premier solution, a **monolithic microwave integrated circuit (MMIC)** amplifier engineered to deliver exceptional performance across an incredibly wide bandwidth of **2 to 20 GHz**.

Fabricated on an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, this amplifier is designed for superior high-frequency operation. The pHEMT technology is the cornerstone of its success, enabling very high electron mobility and low noise characteristics. This translates directly into a remarkably **low noise figure of 2.0 dB** across much of the band, ensuring that weak signals are amplified with minimal degradation and added noise, which is paramount for maintaining system sensitivity.

Beyond its low noise, the HMC653LP2ETR provides **high gain of 17 dB**, which helps to suppress the noise contribution from subsequent stages in the signal chain. This high gain is also exceptionally flat, typically varying by only ±1.0 dB over the entire 18 GHz bandwidth, a feat that simplifies system design and reduces the need for complex gain-equalization circuits. Furthermore, the amplifier delivers a strong **output power (P1dB) of +18 dBm**, giving it a wide dynamic range and the ability to handle relatively high input signals without compression, making it robust in demanding environments.

The device is housed in a compact, RoHS-compliant 2x2 mm LP2 leadless package, making it suitable for high-density PCB designs. It requires a single positive supply of +3V, drawing a low 65 mA of current, which is ideal for power-sensitive portable and airborne applications. It also integrates DC blocking capacitors on both RF ports and an internal bias network, simplifying external circuitry. Key applications include:

* **Military and Aerospace:** EW systems, radar warning receivers, and UAV data links.

* **Test and Measurement:** As a high-performance gain block in broadband test equipment.

* **Telecommunications:** Point-to-point radio and SATCOM ground terminals.

**ICGOOODFIND:** The HMC653LP2ETR is a benchmark MMIC LNA that masterfully balances ultra-wide bandwidth, low noise, high gain, and good linearity. Its pHEMT-based design makes it an indispensable and robust component for designers pushing the limits of performance in next-generation microwave systems from 2 to 20 GHz.

**Keywords:** **Low Noise Amplifier (LNA)**, **GaAs pHEMT**, **Wideband Amplifier**, **Noise Figure**, **MMIC**