Infineon SPA07N65C3 CoolMOS™ P7 Power Transistor: Datasheet, Application Circuit, and Key Features

The relentless pursuit of higher efficiency, power density, and reliability in power electronics is driven by innovations in semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ family, with the SPA07N65C3 from the P7 series representing a pinnacle of performance in superjunction MOSFETs. Designed for high-voltage switching applications, this transistor is a cornerstone for modern, energy-efficient power supplies.

Key Features and Benefits

The SPA07N65C3 is engineered to excel where it matters most. Its standout characteristics are rooted in Infineon's advanced superjunction technology.

Ultra-Low Effective Dynamic On-Resistance (R_DS(on) eff): A defining feature of the CoolMOS™ P7 series is its exceptional switching behavior. The R_DS(on) eff remains remarkably low even under hard-switching conditions, leading to significantly reduced switching losses. This is a critical advantage over previous generations and competing technologies.

High Voltage Rating: With a 650 V drain-source voltage rating, it offers a robust safety margin for operation in universal mains applications (85 V AC to 305 V AC) and is well-suited for power factor correction (PFC) and flyback converters.

Superior Body Diode Robustness: The intrinsic body diode is designed for high dv/dt capability and soft reverse recovery. This enhances reliability in circuits like totem-pole PFC, where the MOSFET's body diode is actively used, minimizing the risk of failure.

High Efficiency and Power Density: The combination of low conduction and switching losses allows designers to achieve new heights of efficiency, often meeting 80 Plus Titanium standards. Alternatively, it enables operation at higher switching frequencies, allowing for the use of smaller magnetics and capacitors to increase power density.

Optimized Gate Charge (Q_G): The product of R_DS(on) and Q_G – a key figure of merit – is exceptionally low. This ensures easy drive capability and further contributes to minimizing total losses in the system.

Typical Application Circuit

A primary application for the SPA07N65C3 is in a High-Power Totem-Pole PFC Stage, which is essential for achieving ultra-high efficiency in server PSUs, telecom rectifiers, and industrial power systems.

In this circuit, the SPA07N65C3 is used in the high-frequency switching leg. Its fast switching and robust body diode are crucial for the critical transition modes of this topology. The MOSFETs switch at high frequency (e.g., 65 kHz) to shape the input current to be sinusoidal and in-phase with the input voltage. The low switching losses of the SPA07N65C3 directly translate to lower heat generation and higher achievable efficiency compared to standard MOSFETs, making the challenging totem-pole topology commercially viable.

Datasheet Overview

The datasheet is the ultimate source for successful implementation. Key parameters to review include:

Absolute Maximum Ratings: Understanding the limits for V_DS, V_GS, and continuous/peak drain current (I_D, I_DM) is vital for ensuring reliability.

Electrical Characteristics: Pay close attention to the specific test conditions for R_DS(on) (typically 400 mΩ max. at V_GS = 10 V, I_D = 3.5 A), total gate charge (Q_G ~ 28 nC), and output capacitance (C_oss ~ 40 pF).

Switching Characteristics: Graphs detailing switching times, energy losses (E_on, E_off), and reverse recovery charge (Q_rr) are essential for simulating and optimizing the performance of your specific circuit.

ICGOODFIND Summary

The Infineon SPA07N65C3 CoolMOS™ P7 is a benchmark high-voltage MOSFET that delivers a transformative combination of ultra-low switching losses, high body diode robustness, and exceptional efficiency. It is an ideal technology enabler for advanced, high-density power supply designs, particularly in totem-pole PFC, server SMPS, industrial drives, and lighting applications. By drastically reducing energy loss, it not only improves product performance but also contributes to a lower carbon footprint.

Keywords:

1. Superjunction MOSFET

2. Switching Losses

3. Power Factor Correction (PFC)

4. High Efficiency

5. Body Diode Robustness