Infineon IPA65R420CFD: A 650V CoolMOS™ CFD2 Power Transistor for High-Efficiency Switching Applications

In the relentless pursuit of higher efficiency and power density in modern electronics, the choice of power switching device is paramount. The Infineon IPA65R420CFD, a 650V CoolMOS™ CFD2 transistor, stands out as a premier solution engineered to meet these demanding challenges. This device is specifically designed to excel in high-frequency, high-efficiency switching applications, from server and telecom SMPS to industrial motor drives and renewable energy systems.

At the core of its performance is Infineon's proprietary CoolMOS™ CFD2 technology, which represents a significant leap forward over traditional superjunction (SJ) MOSFETs. The "CFD" stands for "Charge Compensation Field-Effect Transistor," a design that achieves an exceptionally low figure-of-merit (RDS(on) x QG). This translates into two critical advantages: minimal conduction losses and drastically reduced switching losses. The result is cooler operation and the ability to operate at higher switching frequencies, which allows designers to shrink the size of magnetic components like inductors and transformers, thereby increasing overall power density.

A key feature of the CFD2 family is the integrated fast body diode. Unlike conventional MOSFETs, this diode offers outstanding reverse recovery characteristics (softness and low Qrr). This is crucial for hard-switching topologies like power factor correction (PFC) circuits, as it minimizes reverse recovery losses and associated electromagnetic interference (EMI), leading to more robust and reliable designs.

The IPA65R420CFD boasts a maximum drain-source voltage (VDS) of 650V, providing ample headroom for universal mains applications. Its low on-state resistance (RDS(on)) of 0.042Ω ensures high efficiency during the conduction phase. Furthermore, its optimized gate charge ensures swift and controlled switching, putting less strain on the gate driver circuitry.

Engineers will also appreciate its high parameter stability and durability, which are essential for industrial-grade products. The device's design ensures a wide safe operating area (SOA) and high resilience against avalanche and overcurrent conditions, contributing to the long-term reliability of the end application.

ICGOOODFIND: The Infineon IPA65R420CFD is a benchmark high-voltage MOSFET that masterfully balances ultra-low losses, high switching speed, and robust reliability. It is an ideal technology enabler for designers pushing the limits of efficiency and power density in next-generation power conversion systems.

Keywords: CoolMOS™ CFD2, High-Efficiency Switching, Low Switching Losses, Fast Body Diode, Power Density