Infineon IPG20N04S4-12: A High-Performance 40V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. Addressing these critical demands, Infineon Technologies introduces the IPG20N04S4-12, a standout member of its renowned OptiMOS™ power MOSFET family. This 40V N-channel MOSFET is engineered to deliver exceptional efficiency and power density in a wide array of applications, from advanced DC-DC converters and motor control to synchronous rectification in switched-mode power supplies (SMPS).

A key strength of this MOSFET lies in its ultra-low typical on-state resistance (R DS(on)) of just 1.8 mΩ at a gate-source voltage of 10 V. This remarkably low resistance is the cornerstone of its high-performance credentials, as it directly translates to minimal conduction losses. When a device conducts current, power is dissipated as heat proportional to its R DS(on). By drastically reducing this value, the IPG20N04S4-12 operates with significantly higher efficiency, leading to cooler operation and reduced need for large heat sinks, which saves both space and cost in the final system design.

Furthermore, the device boasts an outstanding gate charge (Q G) performance. The switching characteristics of a MOSFET are heavily influenced by how much charge is required to turn it on and off. A lower gate charge enables faster switching frequencies, which allows designers to shrink the size of associated passive components like inductors and capacitors. This combination of low R DS(on) and low Q G makes the IPG20N04S4-12 a superior choice for high-frequency switching applications, pushing the boundaries of power density.

The IPG20N04S4-12 is also characterized by its high robustness and durability. It features a high maximum continuous drain current (I D) of 200 A, underscoring its ability to handle substantial power levels. Packaged in the space-efficient and thermally enhanced D2PAK (TO-263), it ensures excellent power dissipation from its chip to the printed circuit board (PCB). This package is not only mechanically sturdy but also facilitates efficient automated manufacturing processes.

Designed with the environment in mind, this OptiMOS™ device is fully compliant with the RoHS and halogen-free directives, meeting the industry's stringent requirements for green and sustainable electronic components.

ICGOOODFIND: The Infineon IPG20N04S4-12 is a benchmark for high-performance 40V power MOSFETs. Its winning combination of ultra-low R DS(on), low gate charge, and a robust package provides designers with a solution that maximizes efficiency, enables higher power density, and improves overall system reliability. It is an optimal component for modern, demanding power management challenges.

Keywords: OptiMOS, Low RDS(on), High Efficiency, Power Density, Synchronous Rectification.