Onsemi BSS138L Low-Voltage N-Channel Logic Level Enhancement Mode FET
The Onsemi BSS138L is a highly efficient N-Channel Logic Level Enhancement Mode Field Effect Transistor designed specifically for low-voltage applications. It is widely recognized for its ability to be driven directly from logic-level signals (as low as 1.8V), making it an indispensable component in modern digital circuits, from portable electronics to IoT devices and power management subsystems.
A key feature of the BSS138L is its low threshold voltage, which ensures strong enhancement-mode operation even when controlled by microcontrollers, FPGAs, or other low-voltage GPIO pins. With a drain-source voltage (VDS) of 50V and a continuous drain current (ID) of 220mA, it offers a robust performance for switching and amplification tasks in constrained power environments. Moreover, its low on-state resistance (RDS(on)) contributes to minimal power loss and higher overall system efficiency.
The transistor is housed in a compact SOT-23 surface-mount package, ideal for high-density PCB designs. Its fast switching characteristics also make it suitable for load switching, signal level shifting, and part of power protection circuits. Engineers frequently choose the BSS138L for its reliability, cost-effectiveness, and compatibility with automated assembly processes.
The Onsemi BSS138L stands out as an optimal choice for designers seeking a reliable, logic-level MOSFET that combines low driving voltage, efficient power handling, and a small form factor—making it perfect for space-sensitive and power-conscious applications.
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Keywords:
Logic Level MOSFET, Low Threshold Voltage, Enhancement Mode, SOT-23 Package, Low On-Resistance
