Infineon IPD90P04P4L04ATMA1: A High-Performance P-Channel Power MOSFET

The Infineon IPD90P04P4L04ATMA1 represents a significant advancement in P-Channel Power MOSFET technology, engineered to meet the rigorous demands of modern power management applications. As a member of Infineon’s innovative OptiMOS™ family, this component is optimized for high efficiency, thermal performance, and reliability in a compact package.

Designed with a low threshold voltage and an ultra-low on-state resistance (RDS(on)) of just 4.0 mΩ, this MOSFET minimizes conduction losses, making it ideal for high-current switching. Its P-channel configuration simplifies circuit design in applications such as load switching, battery protection, and power distribution, where it often helps reduce component count and board space.

The device operates efficiently with a voltage rating of -40 V and a continuous drain current of -90 A, supporting high-power scenarios without compromising thermal stability. The advanced trench technology employed ensures exceptional switching performance, which is critical in high-frequency applications like DC-DC converters and motor control systems.

Housed in a robust PG-TO263-3 package, the IPD90P04P4L04ATMA1 offers excellent thermal conductivity, enabling effective heat dissipation and sustained performance under heavy loads. Its AEC-Q101 qualification further makes it suitable for automotive environments, where durability under extreme conditions is essential.

ICGOOODFIND:

The Infineon IPD90P04P4L04ATMA1 stands out as a top-tier P-Channel MOSFET, combining low RDS(on), high current capability, and superior thermal properties. It is an optimal choice for designers seeking efficiency and reliability in power electronics.

Keywords:

P-Channel MOSFET, Low RDS(on), High Current Capability, AEC-Q101 Qualified, Power Switching